L16ESD24VA2-2.pdf

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LITE-ON
SEMICONDUCTOR
L16ESD24VA2
STAND-OFF VOLTAGE -
24
Volts
POWER DISSIPATION -
160
WATTS
ESD PROTECTION DEVICE
GENERAL DESCRIPTION
The L16ESD24VA2 is designed to protect sensitive semiconductor
components from damage or upset due to Electro Static Discharge
(ESD).
SOD-523
SOD-523
DIM.
A
B
C
D
E
F
MIN.
0.51
0.25
0.08
1.10
0.75
1.50
MAX.
0.77
0.35
0.15
1.30
0.85
1.70
FEATURES
Protects one data or I/O line
Max. peak pulse power : Ppp = 160W at tp = 8/20 us.
Low clamping voltage
IEC 61000-4-2, level 4 ( ESD ), > ±15KV ( air ) ; > ±8KV ( contact )
All Dimensions in millimeter
PIN A SSIGNMENT
1
2
Cathode
anode
APPLICATION
Computers and peripherals
Communication system
Audio & video equipment
Portable lnstrumentation
Marking & Orientation
MECHANICAL DATA
PAO
Case Material: "Green" molding compound UL flammability
classification 94V-0 (No Br.Sb, Cl)
Terminals: Lead Free Plating (Matte Tin Finish)
Component in accordance to RoHs 2002/95/E
MAXIMUM RATINGS (Tj= 25℃ unless otherwise noticed)
Rating
Peak Pulse Power (tp = 8/20us)
Peak Pulse Current (tp = 8/20us)
Operating Junction Temperature Range
Storage Temperature Range
Soldering Temperature, t max = 10s
Symbol
P
pk
Ipp
T
J
Tstg
T
L
Value
160
3
-55 to + 125
-55 to + 150
260
Unit
W
A
℃
℃
℃
ELECTRICAL CHARACTERISTICS
(Tj= 25℃ unless otherwise noticed)
Parameter
Reverse standoff voltage
Breakdown voltage
Reverse leakage current
Clamping Voltage
Clamping Voltage
Junction capacitance
Symbol
V
RWM
V
BR
I
RM
V
C
V
C
C
J
I
R
= 1 mA
V
DRM
= 24V
I
PP
= 1A, tp = 8/20µs
I
PP
= 3A, tp = 8/20µs
V
R
= 0V, f = 1MHz
23
Conditions
MIn
---
26.5
---
Typ
---
---
----
Max
24
29.5
50
36
55
35
Unit
V
V
nA
V
V
pF
REV. 2, Oct-2010, KSIR26
RATING AND CHARACTERISTIC CURVES
L16ESD24VA2
Figure 1. 8/20 us pulse waveform
according to IEC 61000-4-5
Figure 2. ESD pulse waveform
according to IEC 61000-4-2
1000
1.2
Peak Pulse Power (W)
Ppp/Ppp (25
℃
)
100
1000
0.8
100
TJ =25℃, tp (us) = 8/20 us
exponentially decay waveform
0.4
10
1
10
Pulse Time (us)
0
0
25
50
75
100
125
150
Junction Temperature (
℃
)
Figure 4. Peak pulse power versus TJ
Figure 3. Power Dissipation versus Pulse Time
25
20
Capacitance (pF)
100.0
IR / IR (25
℃
)
TJ =25℃, f=1MHz, Vosc=100mV
10.0
15
10
5
0
0
1
2
3
4
5
Reverse Voltage (V)
Figure 5. Typical Junction Capactiance
1.0
0.1
0
25
50
75
100
125
150
Junction Temperature (
℃
)
Figure 6. Reverse Leakage Current versus TJ
RATING AND CHARACTERISTIC CURVES
L16ESD24VA2
I/O1
+/-8KV
ESD Contact
discharge
V (i/o)
Figure 7. ESD Test Configuration
Figure 8. Clamped +8 kV ESD voltage waveform
Figure 9. Clamped -8 kV ESD voltage waveform
Legal Disclaimer Notice
L16ESD24VA2
Important Notice and Disclaimer
LSC reserves the right to make changes to this document and its products and
specifications at any time without notice. Customers should obtain and confirm the
latest product information and specifications before final design, purchase or use.
LSC makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does LSC assume any liability for
application assistance or customer product design. LSC does not warrant or
accept any liability with products which are purchased or used for any unintended
or unauthorized application.
No license is granted by implication or otherwise under any intellectual property
rights of LSC.
LSC products are not authorized for use as critical components in life support
devices or systems without express written approval of LSC.

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